Design, Simulation Analysis of Phosphorus Junctionless Multi-Fin FinFET using High K dielectric Material

Abstract

This Paper Proposes a Phosphorus Multifin Junctionless FinFET to show that there will be a subsequent increase in ON Current of Junctionless FinFET when Compared to Junction Version FinFET. A Multifin architecture has been incorporated to the device to improve the performance. The proposed device is simulated for two different technology nodes 65nm and 32nm. ON Current of both junction version FinFET and Junctionless FinFET are compared for both the technology nodes 65nm and 32nm. The impact of Work function on Current (Ion) is also illustrated.